Analytical and experimental determination of the parasitic parameters in high-frequency inductor

The paper presents the results of calculations, simulations, and measurements of parasitic capacitance of winding in ferrite inductor suitable for cooperating with 2 kW DC-DC boost converter built using SiC JFET transistors, operating with a switching frequency of 100 kHz. The inductor winding is made of litz wire in a two-layer configuration. The lumped model of inductor winding was adopted. The results of analytical calculations have been compared with the results obtained from experimental investigations based on the resonance effect.