Tytuł pozycji:
Kinetic Exchange in Diluted Magnetic Semiconductors of Wurtzite Structure
- Tytuł:
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Kinetic Exchange in Diluted Magnetic Semiconductors of Wurtzite Structure
- Autorzy:
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Blinowski, J.
Kacman, P.
- Tematy:
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75.50.Pp
75.30.-m
- Data publikacji:
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1993-10
- Wydawca:
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Polska Akademia Nauk. Instytut Fizyki PAN
- Język:
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angielski
- Prawa:
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Wszystkie prawa zastrzeżone. Swoboda użytkownika ograniczona do ustawowego zakresu dozwolonego użytku
- Źródło:
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Acta Physica Polonica A; 1993, 84, 4; 693-696
0587-4246
1898-794X
- Dostawca treści:
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Biblioteka Nauki
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Przejdź do źródła  Link otwiera się w nowym oknie
Kinetic exchange between valence electrons and paramagnetic ions in diluted magnetic semiconductors of wurtzite structure is examined and compared with the results obtained previously for zinc-blende type diluted magnetic semiconductors. Two limiting electron configurations of the impurity ion, d$\text{}^{5}$ and d$\text{}^{1}$, are discussed. For the former, it is shown that the exchange constant anisotropy, experimentally observed in CdMnSe, results from the anisotropy of the hybridization matrix elements. In the latter case, apart from the similar anisotropy of the ferromagnetic exchange constant, additional, antiferromagnetic corrections should be expected, since for this particular symmetry the hybridization between the ground state of the ion and valence band becomes allowed.