Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel

Electron transport and drain current noise in field effect transistor with $n^+$ $nn^+$ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability.