Stress Dependence of the Switching Field in Glass Coated Microwires

Here we present the study of the stress dependence of the switching field in amorphous glass-coated magnetic microwire of composition FeNiMoB. Samples were heat treated in the temperature range from 250°C up to 500°C in order to obtain relaxed and nanocrystalline state. As-cast microwire shows strong stress dependence of the switching field, which decreases with the temperature of annealing. The sample is almost not stress dependent after heat treatment at 425°C, because the magnetostriction vanishes. However, the strongest stress dependence was found for the microwire annealed at 400°C, just below the optimal annealing temperature to obtain the nanocrystalline state.